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GT40T301 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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GT40T301 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page GT40T301 2002-01-18 1 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A) FRD : trr = 0.7 µs (typ.) (di/dt = −20 A/µs) • Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1500 V Gate-emitter voltage VGES ±25 V DC IC 40 Collector current 1 ms ICP 80 A DC IECF 30 Emitter-collector forward current 1 ms IECPF 80 A Collector power dissipation (Tc = 25°C) PC 200 W Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Equivalent Circuit Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Collector Gate Emitter |
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