MJD44H11T4G datasheet(4/9 Pages) ONSEMI

Part #	MJD44H11T4G

Description	Complementary Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJD44H11 (NPN), MJD45H11 (PNP)

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Figure 4. MJD44H11 DC Current Gain

Figure 5. MJD45H11 DC Current Gain

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

10

100

1000

Figure 6. MJD44H11 DC Current Gain

Figure 7. MJD45H11 DC Current Gain

Figure 8. MJD44H11 Saturation Voltage

VCE(sat)

Figure 9. MJD45H11 Saturation Voltage

VCE(sat)

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0

0.1

0.2

0.3

0.4

0.6

0.7

0.8

150

°C

−55

°C

25

°C

VCE = 1 V

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

10

100

1000

150

°C

−55

°C

25

°C

VCE = 1 V

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

10

100

1000

150

°C

−55

°C

25

°C

VCE = 4 V

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

10

100

1000

150

°C

−55

°C

25

°C

VCE = 4 V

0.5

150

°C

−55

°C

25

°C

IC/IB = 20

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0

0.1

0.2

0.3

0.4

0.6

0.7

0.8

0.5

150

°C

−55

°C

25

°C

IC/IB = 20

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