NSVF3007SG3

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS at Ta

Parameter

Symbol

Conditions

Value

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB = 5 V, IE = 0 A

1.0

A

Emitter Cutoff Current

IEBO

VEB = 1 V, IC = 0 A

1.0

A

DC Current Gain

hFE

VCE = 5 V, IC = 5 mA

60

150

Gain-Bandwidth Product

fT

VCE = 5 V, IC = 10 mA

6

8

GHz

Forward Transfer Gain

| S21e |

2

VCE = 5 V, IC = 10 mA, f = 1 GHz

9

12

dB

Noise Figure

NF

VCE = 5 V, IC = 10 mA, f = 1 GHz

1.2

1.8

dB

Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Note 3 : Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.

Collector-to-Base Voltage, VCB -- V

Cob -- VCB

Collector Current, IC -- mA

hFE -- IC

Collector-to-Emitter Voltage, VCE -- V

Base-to-Emitter Voltage, VBE -- V

IC -- VBE

IC -- VCE

Collector Current, IC -- mA

f T -- IC

Collector-to-Base Voltage, VCB -- V

Cre -- VCB

0

0.2

0.4

0.6

0.8

1.0

012

10

8

46

2

0

10

30

20

5

15

25

0

10

25

20

15

5

30

IB=0μA

50

μA

2

3

5

7

2

3

5

7

100

10

1000

3

25

7

0.1

3

25

7

1.0

10

3

25

7 100

VCE=5V

VCE=5V

2

7

5

3

2

7

5

3

0.1

10

1.0

3

25

100

0.1

73

25

7

1.0

3

25 7 10

f=1MHz

7

2

3

5

7

2

3

5

100

10

1.0

1.0

23

5

7

10

23

5

7

100

VCE=5V

f=1GHz

2

5

7

3

1.0

0.1

3

25

100

0.1

73

25

7

10

3

25

7

1.0

f=1MHz

100

μA

150

μA

200μA

250μA

300μA

350μA

400μA

450

μA