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LM389 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. LM389
Description  LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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 2 page
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Absolute Maximum Ratings
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Supply Voltage
15V
Package Dissipation (Note 1)
189W
Input Voltage
g
04V
Storage Temperature
b
65 Cto a150 C
Operating Temperature
0 Cto a70 C
Junction Temperature
150 C
Lead Temperature (Soldering 10 sec)
260 C
Collector to Emitter Voltage VCEO
12V
Collector to Base Voltage VCBO
15V
Collector to Substrate Voltage VCIO
(Note 2)
15V
Collector Current IC
25 mA
Emitter Current IE
25 mA
Base Current IB
5mA
Power Dissipation (Each Transistor) TA s a70 C 150 mW
Thermal Resistance
iJC
24 CW
iJA
70 CW
Electrical Characteristics TA e 25 C
Symbol
Parameter
Conditions
Min
Typ
Max
Units
AMPLIFIER
VS
Operating Supply Voltage
4
12
V
IQ
Quiescent Current
VS e 6V VIN e 0V
6
12
mA
POUT
Output Power (Note 3)
THD e 10%
VS e 6V RL e 8X
250
325
mW
VS e 9V RL e 16X
500
mW
AV
Voltage Gain
VS e 6V f e 1 kHz
23
26
30
dB
10 mF from Pins 4 to 12
46
dB
BW
Bandwidth
VS e 6V Pins 4 and 12 Open
250
kHz
THD
Total Harmonic Distortion
VS e 6V RL e 8X POUT e 125 mW
02
30
%
f e 1 kHz Pins 4 and 12 Open
PSRR
Power Supply Rejection Ratio
VS e 6V f e 1 kHz CBYPASS e 10 mF
30
50
dB
Pins 4 and 12 Open Referred to Output
RIN
Input Resistance
10
50
kX
IBIAS
Input Bias Current
VS e 6V Pins 5 and 16 Open
250
nA
TRANSISTORS
VCEO
Collector to Emitter
IC e 1 mA IB e 0
12
20
V
Breakdown Voltage
VCBO
Collector to Base
IC e 10 mA IE e 0
15
40
V
Breakdown Voltage
VCIO
Collector to Substrate
IC e 10 mA IE e IB e 0
15
40
V
Breakdown Voltage
VEBO
Emitter to Base
IE e 10 mA IC e 0
64
71
78
V
Breakdown Voltage
HFE
Static Forward Current
IC e 10 mA
100
Transfer Ratio (Static Beta)
IC e 1 mA
100
275
IC e 10 mA
275
hoe
Open-Circuit Output Admittance
IC e 1 mA VCE e 5V f e 10 kHz
20
m
mho
VBE
Base to Emitter Voltage
IE e 1 mA
07
085
V
lVBE1–VBE2l
Base to Emitter Voltage Offset
IE e 1mA
1
5
mV
VCESAT
Collector to Emitter
IC e 10 mA IB e 1mA
015
05
V
Saturation Voltage
CEB
Emitter to Base Capacitance
VEB e 3V
15
pF
CCB
Collector to Base Capacitance
VCB e 3V
2
pF
CCI
Collector to Substrate
VCI e 3V
35
pF
Capacitance
hfe
High Frequency Current Gain
IC e 10 mA VCE e 5V f e 100 MHz
15
55
Note 1
For operation in ambient temperatures above 25 C the device must be derated based on a 150 C maximum junction temperature and a thermal resistance
of 66 CW junction to ambient
Note 2
The collector of each transistor is isolated from the substrate by an integral diode Therefore the collector voltage should remain positive with respect to
pin 17 at all times
Note 3
If oscillation exists under some load conditions add 27X and 005 mF series network from pin 1 to ground
2




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