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TDA4867J Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. TDA4867J
Description  Full bridge current driven vertical deflection booster
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 5 page
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2003 Feb 05
5
Philips Semiconductors
Preliminary specification
Full bridge current driven vertical
deflection booster
TDA4867J
Protection
The output stages are protected against:
• Thermal overshoot in normal operation
• Short-circuit of the coil (pins OUTB and OUTA).
Guard circuit
The internal guard circuit provides a blanking signal for the
CRT. The guard signal is active HIGH:
• At thermal overshoot
• During flyback
• When missing flyback supply voltage
• When power supply voltage too low, VP <VP(min).
The internal guard circuit will not be activated, if the input
signals on pins INP and INN delivered from the driver
circuit are out of range or at short-circuit of the coil
(pins OUTB and OUTA).
For this reason an external guard circuit can be applied to
detect failures of the deflection (see Fig.5). This circuit will
be activated when flyback pulses are missing, which is the
indication of any abnormal operation.
The guard output pin can be used as input for the power
save mode. A current or a voltage has to be applied to the
pin. In this case the output stages are switched off
completely.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages referenced to ground (pin GND);
unless otherwise specified.
Notes
1. Maximum output currents IOUTB and IOUTA are limited by current protection.
2. Internally limited by thermal protection; will be activated for Tj ≥ 150 °C.
3. Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k
Ω resistor.
4. Machine model: equivalent to discharging a 200 pF capacitor through a 0.75
µH inductance.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VP
supply voltage
0
30
V
VFB
flyback supply voltage
0
60
V
IFB
flyback supply current
0
±1.8
A
VINP,VINN
input voltage
0
5
V
IINP,IINN
input current
0
±5mA
VOUTB
output voltage on pin OUTB
0
VP
V
VOUTA
output voltage on pin OUTA
0
VFB
V
IOUTB, IOUTA output current
note 1
0
±1.6
A
VFEEDB
feedback voltage
0
VP
V
IFEEDB
feedback current
0
±5mA
VGUARD
guard voltage
0
10
V
IGUARD
guard current
0
±5mA
Tstg
storage temperature
−20
+150
°C
Tamb
ambient temperature
−20
+75
°C
Tj
junction temperature
note 2
−20
+150
°C
Vesd
electrostatic discharge voltage
note 3
−4000
+4000
V
note 4
−250
+250
V




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