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70121L55JGI8 Datasheet(PDF) 6 Page - Integrated Device Technology

Part # 70121L55JGI8
Description  HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
Download  16 Pages
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

70121L55JGI8 Datasheet(HTML) 6 Page - Integrated Device Technology

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6.42
IDT70121/IDT70125
High-Speed 2K x 9 Dual-Port Static RAM with Busy & Interrupt
Industrial and Commercial Temperature Ranges
6
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(3)
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter guaranteed by device characterization, but is not production tested.
3. 'X' in part numbers indicates power rating (S or L).
70121X25
70125X25
Com'l Only
70121X35
70125X35
Com'l
& Ind
Unit
Symbol
Parameter
Min.
Max.
Min.
Max.
READ CYCLE
tRC
Read Cycle Time
25
____
35
____
ns
tAA
Address Access Time
____
25
____
35
ns
tACE
Chip Enable Access Time
____
25
____
35
ns
tAOE
Output Enable Access Time
____
12
____
25
ns
tOH
Output Hold from Address Change
0
____
0
____
ns
tLZ
Output Low-Z Time(1,2)
0
____
0
____
ns
tHZ
Output High-Z Time(1,2)
____
10
____
15
ns
tPU
Chip Enable to Power Up Time(2)
0
____
0
____
ns
tPD
Chip Disable to Power Down Time(2)
____
50
____
50
ns
2654 tbl 09a
70121X55
70125X55
Com'l Only
Unit
Symbol
Parameter
Min.
Max.
READ CYCLE
tRC
Read Cycle Time
55
____
ns
tAA
Address Access Time
____
55
ns
tACE
Chip Enable Access Time
____
55
ns
tAOE
Output Enable Access Time
____
35
ns
tOH
Output Hold from Address Change
0
____
ns
tLZ
Output Low-Z Time(1,2)
0
____
ns
tHZ
Output High-Z Time(1,2)
____
30
ns
tPU
Chip Enable to Power Up Time(2)
0
____
ns
tPD
Chip Disable to Power Down Time(2)
____
50
ns
2654 tbl 09b


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