 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
7016L25GGB8 Datasheet(PDF) 8 Page - Integrated Device Technology |
|
||||||||||||||||||||||||||||||
7016L25GGB8 Datasheet(HTML) 8 Page - Integrated Device Technology |
|
|
8 / 21 page  6.42 IDT7016S/L High-Speed 16K x 9 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges 8 tRC R/ W CE ADDR tAA OE 3190 drw 07 (4) tACE (4) tAOE (4) (1) tLZ tOH (2) tHZ (3,4) tBDD DATAOUT BUSYOUT VALID DATA (4) Waveform of Read Cycles(5) NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is de-asserted first, CE or OE. 3. tBDDdelay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation tovalidoutputdata. 4. Startofvaliddatadependsonwhichtimingbecomeseffectivelast:tAOE,tACE,tAAortBDD. 5. SEM = VIH. Timing of Power-Up / Power-Down CE 3190 drw 08 tPU ICC ISB tPD 50% 50% , |
Similar Part No. - 7016L25GGB8 |
|
Similar Description - 7016L25GGB8 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
