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IRLI520N Datasheet(PDF) 2 Page - International Rectifier |
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IRLI520N Datasheet(HTML) 2 Page - International Rectifier |
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2 / 2 page  IRLI520N Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.18 VGS = 10V, ID = 6.0A ––– ––– 0.22 Ω VGS = 5.0V, ID = 6.0A ––– ––– 0.26 VGS = 4.0V, ID = 5.0A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 3.1 ––– ––– S VDS = 25V, ID = 6.0A ––– ––– 25 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 20 ID = 6.0A Qgs Gate-to-Source Charge ––– ––– 4.6 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 10 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 40 ––– VDD = 50V tr Rise Time ––– 35 ––– ns ID = 6.0A td(off) Turn-Off Delay Time ––– 23 ––– RG = 11Ω, VGS = 5.0V tf Fall Time ––– 22 ––– RD = 8.2Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 440 ––– VGS = 0V Coss Output Capacitance ––– 97 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 50 ––– ƒ = 1.0MHz, See Fig. 5 C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current S D G LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– RDS(on) Static Drain-to-Source On-Resistance nH pF S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 4.7mH RG = 25Ω, IAS = 6.0A. (See Figure 12)
t=60s, ƒ=60Hz ISD ≤ 6.0A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Uses IRL520N data and test conditions Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 6.0A, VGS = 0V trr Reverse Recovery Time ––– 110 160 ns TJ = 25°C, IF = 6.0A Qrr Reverse Recovery Charge ––– 410 620 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A 8.1 35 |
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