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IRLIZ24N Datasheet(PDF) 2 Page - International Rectifier |
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IRLIZ24N Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRLIZ24N Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.060 VGS = 10V, ID = 8.4A ––– ––– 0.075 Ω VGS = 5.0V, ID = 8.4A ––– ––– 0.105 VGS = 4.0V, ID = 7.0A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 8.3 ––– ––– S VDS = 25V, ID = 11A ––– ––– 25 VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 15 ID = 11A Qgs Gate-to-Source Charge ––– ––– 3.7 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 8.5 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 7.1 ––– VDD = 28V tr Rise Time ––– 74 ––– ID = 11A td(off) Turn-Off Delay Time ––– 20 ––– RG = 12Ω, VGS = 5.0V tf Fall Time ––– 29 ––– RD = 2.4 Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 480 ––– VGS = 0V Coss Output Capacitance ––– 130 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5 C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) S D G IDSS Drain-to-Source Leakage Current IGSS LS Internal Source Inductance ––– 7.5 ––– LD Internal Drain Inductance ––– 4.5 ––– µA nA ns nH RDS(on) Static Drain-to-Source On-Resistance Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Uses IRLZ24N data and test conditions VDD = 25V, starting TJ = 25°C, L = 790µH RG = 25Ω, IAS = 11A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%.
t=60s, ƒ=60Hz ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 8.4A, VGS = 0V trr Reverse Recovery Time ––– 60 90 ns TJ = 25°C, IF = 11A Qrr Reverse RecoveryCharge ––– 130 200 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics A ––– ––– 72 ––– ––– 14 S D G Next Data Sheet Index Previous Datasheet To Order |
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