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IXTH24N50 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTH24N50 Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 4 page 1 - 4 © 2000 IXYS All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 500 V V DGR T J = 25 °C to 150°C; R GS = 1 MΩ 500 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C 21N50 21 A 24N50 24 A I DM T C = 25°C, pulse width limited by TJM 21N50 84 A 24N50 96 A P D T C = 25°C 300 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C M d Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s TO-247 AD (IXTH) MegaMOSTMFET N-Channel Enhancement Mode TO-204 AE (IXTM) V DSS I D25 R DS(on) IXTH / IXTM 21N50 500 V 21 A 0.25 Ω Ω Ω Ω Ω IXTH / IXTM 24N50 500 V 24 A 0.23 Ω Ω Ω Ω Ω G = Gate, D = Drain, S = Source, TAB = Drain D G Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, I D = 250 µA 500 V V GS(th) V DS = V GS, ID = 250 µA2 4 V I GSS V GS = ±20 V DC, VDS = 0 ±100 nA I DSS V DS = 0.8 • V DSS T J = 25°C 200 µA V GS = 0 V T J = 125°C1 mA R DS(on) V GS = 10 V, I D = 0.5 ID25 21N50 0.25 Ω 24N50 0.23 Ω Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Features l International standard packages l Low R DS (on) HDMOS TM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Applications l Switch-mode and resonant-mode power supplies l Motor controls l Uninterruptible Power Supplies (UPS) l DC choppers Advantages l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) l Space savings l High power density 91536F(5/97) D (TAB) IXYS reserves the right to change limits, test conditions, and dimensions. |
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