NSBC123JF3 datasheet(4/12 Pages) ONSEMI

Part #	NSBC123JF3

Description	Digital Transistors (BRT)

Download	12 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

4 / 12 page

MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3

www.onsemi.com

4

Table 2. THERMAL CHARACTERISTICS

Characteristic

Unit

Max

Symbol

THERMAL CHARACTERISTICS (SOT−1123) (NSBC123JF3)

Total Device Dissipation

TA = 25°C

(Note 3)

(Note 4)

Derate above 25

°C

(Note 3)

(Note 4)

PD

254

297

2.0

2.4

mW

mW/

°C

Thermal Resistance,

(Note 3)

Junction to Ambient

(Note 4)

RqJA

493

421

°C/W

Thermal Resistance, Junction to Lead

(Note 3)

RqJL

193

°C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 x 1.0 Inch Pad.

3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.

4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.

Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector−Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter−Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

−

0.2

mAdc

Collector−Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO

50

−

Vdc

Collector−Emitter Breakdown Voltage (Note 5)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

Vdc

ON CHARACTERISTICS

DC Current Gain (Note 5)

(IC = 5.0 mA, VCE = 10 V)

hFE

80

140

−

Collector

*Emitter Saturation Voltage (Note 5)

(IC = 10 mA, IB = 1.0 mA)

VCE(sat)

−

0.25

Vdc

Input Voltage (off)

(VCE = 5.0 V, IC = 100 mA)

Vi(off)

−

0.6

0.5

Vdc

Input Voltage (on)

(VCE = 0.3 V, IC = 5.0 mA)

Vi(on)

1.1

0.8

−

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

VOL

−

0.2

Vdc

Output Voltage (off)

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

VOH

4.9

−

Vdc

Input Resistor

R1

1.5

2.2

2.9

k

W

Resistor Ratio

R1/R2

0.038

0.047

0.056

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle

v 2%.

Similar Part No. - NSBC123JF3

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NSBC123JF3	130Kb / 10P	Digital Transistors (BRT) R1 = 2.2 k, R2 = 47 k August, 2012 ??Rev. 0
	NSBC123JF3	110Kb / 12P	NPN Transistors with Monolithic Bias Resistor Network August, 2015 ??Rev. 3
	NSBC123JF3T5G	130Kb / 10P	Digital Transistors (BRT) R1 = 2.2 k, R2 = 47 k August, 2012 ??Rev. 0
	NSBC123JF3T5G	110Kb / 12P	NPN Transistors with Monolithic Bias Resistor Network August, 2015 ??Rev. 3

More results

Similar Description - NSBC123JF3

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	MUN2213	145Kb / 12P	Digital Transistors (BRT) October, 2016 ??Rev. 4
	MUN2211	140Kb / 12P	Digital Transistors (BRT) October, 2016 ??Rev. 7
	MUN2112	182Kb / 12P	Digital Transistors (BRT) October, 2016 ??Rev. 6
	MUN2214	141Kb / 12P	Digital Transistors (BRT) November, 2016 ??Rev. 4
	MUN2135	183Kb / 12P	Digital Transistors (BRT) October, 2016 ??Rev. 4
	MUN2130	177Kb / 11P	Digital Transistors (BRT) October, 2016 ??Rev. 6
	MUN2131	176Kb / 11P	Digital Transistors (BRT) October, 2016 ??Rev. 5
	MUN2240	134Kb / 11P	Digital Transistors (BRT) October, 2016 ??Rev. 4
	MUN2233	140Kb / 12P	Digital Transistors (BRT) October, 2016 ??Rev. 6
	MUN2232	139Kb / 12P	Digital Transistors (BRT) October, 2016 ??Rev. 3
	MUN2230	134Kb / 11P	Digital Transistors (BRT) November, 2016 ??Rev. 4

More results

NSBC123JF3 Datasheet(PDF) 4 Page - ON Semiconductor

NSBC123JF3 Datasheet(HTML) 4 Page - ON Semiconductor

Similar Part No. - NSBC123JF3

Similar Description - NSBC123JF3

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL