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NSVBC143TPDXV6T1G Datasheet(PDF) 3 Page - ON Semiconductor |
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NSVBC143TPDXV6T1G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 7 page MUN5316DW1, NSBC143TPDXV6 www.onsemi.com 3 ELECTRICAL CHARACTERISTICS (TA = 25°C both polarities Q1 (PNP) and Q2 (NPN), unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − 1.9 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc ON CHARACTERISTICS DC Current Gain (Note 4) (IC = 5.0 mA, VCE = 10 V) hFE 160 350 − Collector−Emitter Saturation Voltage (Note 4) (IC = 10 mA, IB = 0.3 mA) VCE(sat) − − 0.25 Vdc Input Voltage (off) (VCE = 5.0 V, IC = 100 mA) (NPN) (VCE = 5.0 V, IC = 100 mA) (PNP) Vi(off) − 0.6 0.58 − Vdc Input Voltage (on) (VCE = 0.2 V, IC = 10 mA) (NPN) (VCE = 0.2 V, IC = 10 mA) (PNP) Vi(on) − 0.9 1.0 − Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc Input Resistor R1 3.3 4.7 6.1 k W Resistor Ratio R1/R2 − − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. Figure 1. Derating Curve AMBIENT TEMPERATURE ( °C) 125 100 75 50 25 0 −25 −50 0 50 100 150 200 250 400 150 (1) (2) (1) SOT−363; 1.0 x 1.0 inch Pad (2) SOT−563; Minimum Pad 350 300 |
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