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EMC3DXV5T1G Datasheet(PDF) 1 Page - ON Semiconductor |
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EMC3DXV5T1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 11 page © Semiconductor Components Industries, LLC, 2014 May, 2014 − Rev. 7 1 Publication Order Number: EMC2DXV5T1/D EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMC2DXV5T1G series, two complementary BRT devices are housed in the SOT−553 package which is ideal for low power surface mount applications where board space is at a premium. Features • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM 45 Q1 Q2 R1 R1 R2 R2 31 2 http://onsemi.com SOT−553 CASE 463B 1 5 Ux M G G Ux = Specific Device Code x = C, 3, E, or 5 M = Date Code G = Pb−Free Package See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION (Note: Microdot may be in either location) |
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