Power Module

©2016 Littelfuse, Inc

Specifications are subject to change without notice.

Revised:07/21/16

161

MG12200D-BN2MM

1200V 200A IGBT Module

Figure 7: Diode Forward Characteristics

0.6

8

.

1

2

.

1

0

0

2.4

400

320

160

80

240

0

8

4

0

24

A

20

4

8

28

20

16

12

16

12

24

32 36

Figure 8: Switching Energy vs. Gate Resistor

8

4

100

0

400

150

20

24

200 250 300 350

16

12

0

50

Figure 9: Switching Energy vs. Forward Current

Rectangular Pulse Duration (seconds)

0.001

0.01

0.1

1

10

0.001

0.1

1

Diode

IGBT

0.01

Figure 10:Transient Thermal Impedance

4