Power Module

©2016 Littelfuse, Inc

Specifications are subject to change without notice.

Revised:07/21/16

170

MG12200D-BA1MM

1200V 200A IGBT Module

MG12200D-BA1MM

Features

Applications

• Ultra low loss

• High ruggedness

• High short circuit

capability

• Positive temperature

coefficient

• With fast free-wheeling

diodes

Symbol

Parameters

Test Conditions

Values

Unit

IGBT

V

CES

Collector - Emitter Voltage

1200

V

V

GES

Gate - Emitter Voltage

±20

V

I

C

DC Collector Current

T

300

A

T

210

A

I

Cpuls

Pulsed Collector Current

T

600

A

T

420

P

tot

Power Dissipation Per IGBT

1400

W

T

J

Junction Temperature Range

-40 to +150

°C

T

STG

Storage Temperature Range

-40 to +125

°C

V

isol

Insulation Test Voltage

AC, t=1min

3000

V

Diode

V

RRM

Repetitive Reverse Voltage

1200

V

I

F(AV)

Average Forward Current

T

250

A

T

170

A

I

F(RMS)

RMS Forward Current

250

A

I

FSM

Non-Repetitive Surge Forward

Current

T

1860

A

T

1920

Symbol

Parameters

Test Conditions

Min

Typ

Max

Unit

R

thJC

Junction-to-Case Thermal

Resistance

Per IGBT

0.09

K/W

R

thJCD

Per Inverse Diode

0.22

K/W

Torque

Module-to-Sink

Recommended (M6)

3

5

N·m

Torque

Module Electrodes

Recommended (M6)

2.5

5

N·m

Weight

285

g

• Inverter

• Converter

• Welder

• SMPS and UPS

• Induction heating

Life Support Note:

Not Intended for Use in Life Support or Life Saving Applications

The products shown herein are not designed for use in life sustaining or life saving

applications unless otherwise expressly indicated.

®

RoHS

Agency Approvals

1

AGENCY

AGENCY FILE NUMBER

E71639