Power Module

©2015 Littelfuse, Inc

Specifications are subject to change without notice.

Revised:05/19/15

135

MG12150S-BN2MM

1200V 150A IGBT Module

Symbol

Parameters

Test Conditions

Min

Typ

Max

Unit

IGBT

V

GE(th)

Gate - Emitter Threshold Voltage

V

5.0

5.8

6.5

V

V

CE(sat)

Collector - Emitter

Saturation Voltage

I

1.7

V

I

1.9

V

I

CES

Collector Leakage Current

V

1

mA

V

5

mA

I

GES

Gate Leakage Current

V

-400

400

nA

R

Gint

Integrated Gate Resistor

5

Ω

Q

ge

Gate Charge

V

1.4

μC

C

ies

Input Capacitance

V

10.5

nF

C

res

Reverse Transfer Capacitance

0.4

nF

t

d(on)

Turn - on Delay Time

V

I

R

V

Inductive Load

T

260

ns

T

290

ns

t

r

Rise Time

T

30

ns

T

50

ns

t

d(off)

Turn - off Delay Time

T

420

ns

T

520

ns

t

f

Fall Time

T

70

ns

T

90

ns

E

on

Turn - on Energy

T

12

mJ

T

16

mJ

E

off

Turn - off Energy

T

11

mJ

T

14.5

mJ

I

SC

Short Circuit Current

t

600

A

R

thJC

Junction-to-Case Thermal Resistance (Per IGBT)

0.2

K/W

Diode

V

F

Forward Voltage

I

1.65

V

I

1.65

V

I

RRM

Max. Reverse Recovery Current

I

di

T

210

A

Q

rr

Reverse Recovery Charge

30.0

μC

E

rec

Reverse Recovery Energy

13

mJ

R

thJCD

Junction-to-Case Thermal Resistance (Per Diode)

0.36

K/W

2