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70T3799MS166BBGI8 Datasheet(PDF) 7 Page - Integrated Device Technology |
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70T3799MS166BBGI8 Datasheet(HTML) 7 Page - Integrated Device Technology |
7 / 25 page 6.42 IDT70T3719/99M High-Speed 2.5V 256/128K x 72 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges 7 Absolute Maximum Ratings (1) Symbol Rating Commercial & Industrial Unit VTERM (VDD) VDD Terminal Voltage with Respect to GND -0.5 to 3.6 V VTERM(2) (VDDQ) VDDQ Terminal Voltage with Respect to GND -0.3 to VDDQ + 0.3 V VTERM(2) (INPUTS and I/O's) Input and I/O Terminal Voltage with Respect to GND -0.3 to VDDQ + 0.3 V TBIAS(3) Temperature Under Bias -55 to +125 o C TSTG Storage Temperature -65 to +150 o C TJN Junction Temperature +150 o C IOUT(For VDDQ = 3.3V) DC Output Current 50 mA IOUT(For VDDQ = 2.5V) DC Output Current 40 mA 5687 tbl 07 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. This is a steady-state DC parameter that applies after the power supply has reached its nominal operating value. Power sequencing is not necessary; however, the voltage on any Input or I/O pin cannot exceed VDDQ during power supply ramp up. 3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected. NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. COUT also references CI/O. Capacitance (1) (TA = +25°C, F = 1.0MHZ) DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 2.5V ± 100mV) Symbol Parameter Test Conditions 70T3719/99M Unit Min. Max. |ILI| Input Leakage Current(1) VDDQ = Max., VIN = 0V to VDDQ ___ 10 µA |ILI| JTAG & ZZ Input Leakage Current(1,2) VDD = Max., VIN = 0V to VDD ___ ±30 µA |ILO| Output Leakage Current(1,3) CE0 = VIH or CE1 = VIL, VOUT = 0V to VDDQ ___ 10 µA VOL (3.3V) Output Low Voltage(1) IOL = +4mA, VDDQ = Min. ___ 0.4 V VOH (3.3V) Output High Voltage(1) IOH = -4mA, VDDQ = Min. 2.4 ___ V VOL (2.5V) Output Low Voltage(1) IOL = +2mA, VDDQ = Min. ___ 0.4 V VOH (2.5V) Output High Voltage(1) IOH = -2mA, VDDQ = Min. 2.0 ___ V 5687 tbl 09 NOTES: 1. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details. 2. Applicable only for TMS, TDI and TRST inputs. 3. Outputs tested in tri-state mode. Symbol Parameter Conditions(2) Max. Unit CIN Input Capacitance VIN = 0V 15 pF COUT(2) Output Capacitance VOUT = 0V 10.5 pF 5687 tbl 08 |
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