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70T3319S166BCG8 Datasheet(PDF) 8 Page - Integrated Device Technology |
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70T3319S166BCG8 Datasheet(HTML) 8 Page - Integrated Device Technology |
8 / 27 page 6.42 IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges 8 Absolute Maximum Ratings(1) Symbol Rating Commercial & Industrial Unit VTERM (VDD) VDD Terminal Voltage with Respect to GND -0.5 to 3.6 V VTERM(2) (VDDQ) VDDQ Terminal Voltage with Respect to GND -0.3 to VDDQ + 0.3 V VTERM(2) (INPUTS and I/O's) Input and I/O Terminal Voltage with Respect to GND -0.3 to VDDQ + 0.3 V TBIAS(3) Temperature Under Bias -55 to +125 o C TSTG Storage Temperature -65 to +150 o C TJN Junction Temperature +150 o C IOUT(For VDDQ = 3.3V) DC Output Current 50 mA IOUT(For VDDQ = 2.5V) DC Output Current 40 mA 5652 tbl 06 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. This is a steady-state DC parameter that applies after the power supply has reached its nominal operating value. Power sequencing is not necessary; however, the voltage on any Input or I/O pin cannot exceed VDDQ during power supply ramp up. 3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected. DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 2.5V ± 100mV) Symbol Parameter Test Conditions 70T3339/19/99S Unit Min. Max. |ILI| Input Leakage Current(1) VDDQ = Max., VIN = 0V to VDDQ ___ 10 µA |ILI| JTAG & ZZ Input Leakage Current(1,2) VDD = Max., VIN = 0V to VDD ___ ±30 µA |ILO| Output Leakage Current(1,3) CE0 = VIH or CE1 = VIL, VOUT = 0V to VDDQ ___ 10 µA VOL (3.3V) Output Low Voltage(1) IOL = +4mA, VDDQ = Min. ___ 0.4 V VOH (3.3V) Output High Voltage(1) IOH = -4mA, VDDQ = Min. 2.4 ___ V VOL (2.5V) Output Low Voltage(1) IOL = +2mA, VDDQ = Min. ___ 0.4 V VOH (2.5V) Output High Voltage(1) IOH = -2mA, VDDQ = Min. 2.0 ___ V 5652 tbl 08 NOTES: 1. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.6 for details. 2. Applicable only for TMS, TDI and TRST inputs. 3. Outputs tested in tri-state mode. Capacitance(1) (TA = +25°C, f = 1.0MHz) PQFP ONLY Symbol Parameter Conditions(2) Max. Unit CIN Input Capacitance VIN = 3dV 8 pF COUT(3) Output Capacitance VOUT = 3dV 10.5 pF 5652 tbl 07 NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. 3dV references the interpolated capacitance when the input and output switch from 0V to 3V or from 3V to 0V. 3. COUT also references CI/O. |
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