70V3399S166PRFG8 datasheet(8/23 Pages) IDT

Part #	70V3399S166PRFG8

Description	HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM

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Manufacturer	IDT [Integrated Device Technology]

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6.42

IDT70V3319/99S

High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM

Industrial and Commercial Temperature Ranges

8

DC Electrical Characteristics Over the Operating

Temperature and Supply Voltage Range (VDD = 3.3V ± 150mV)

NOTE:

1. At VDD < 2.0V leakages are undefined.

2. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details.

Symbol

Parameter

Test Conditions

70V3319/99S

Unit

Min.

Max.

|ILI|

Input Leakage Current(1)

VDDQ = Max., VIN = 0V to VDDQ

___

10

µA

|ILO|

Output Leakage Currentt(1)

CE0

= VIH or CE1 = VIL, VOUT = 0V to VDDQ

___

10

µA

VOL (3.3V)

Output Low Voltage(2)

IOL = +4mA, VDDQ = Min.

___

0.4

V

VOH (3.3V)

Output High Voltage(2)

IOH = -4mA, VDDQ = Min.

2.4

___

V

VOL (2.5V)

Output Low Voltage(2)

IOL = +2mA, VDDQ = Min.

___

0.4

V

VOH (2.5V)

Output High Voltage(2)

IOH = -2mA, VDDQ = Min.

2.0

___

V

5623 tbl 08

NOTES:

1. These parameters are determined by device characterization, but are not

production tested.

2. 3dV references the interpolated capacitance when the input and output switch

from 0V to 3V or from 3V to 0V.

3. COUT also references CI/O.

Capacitance(1)(TA = +25°C, F = 1.0MHZ)

Symbol

Parameter

Conditions(2)

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

8

pF

COUT(3)

Output Capacitance

VOUT = 3dV

10.5

pF

5623 tbl 07

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