70V7599S200DRGI datasheet(8/22 Pages) IDT

Part #	70V7599S200DRGI

Description	HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM

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Manufacturer	IDT [Integrated Device Technology]

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6.42

8

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM

Industrial and Commercial Temperature Ranges

DC Electrical Characteristics Over the Operating

Temperature and Supply Voltage Range (VDD = 3.3V ± 150mV)

NOTES:

1. At VDD < 2.0V leakages are undefined.

2. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details.

Symbol

Parameter

Test Conditions

70V7599S

Unit

Min.

Max.

|ILI|

Input Leakage Current(1)

VDDQ = Max., VIN = 0V to VDDQ

___

10

µA

|ILO|

Output Leakage Current(1)

CE0

= VIH or CE1 = VIL, VOUT = 0V to VDDQ

___

10

µA

VOL (3.3V)

Output Low Voltage(2)

IOL = +4mA, VDDQ = Min.

___

0.4

V

VOH (3.3V)

Output High Voltage(2)

IOH = -4mA, VDDQ = Min.

2.4

___

V

VOL (2.5V)

Output Low Voltage(2)

IOL = +2mA, VDDQ = Min.

___

0.4

V

VOH (2.5V)

Output High Voltage(2)

IOH = -2mA, VDDQ = Min.

2.0

___

V

5626 tbl 08

NOTES:

1. These parameters are determined by device characterization, but are not

production tested.

2. 3dV references the interpolated capacitance when the input and output switch

from 0V to 3V or from 3V to 0V.

3. COUT also references CI/O.

Capacitance(1)

(TA = +25°C, F = 1.0MHZ) PQFP ONLY

Symbol

Parameter

Conditions(2)

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

8

pF

COUT(3)

Output Capacitance

VOUT = 3dV

10.5

pF

5626 tbl 07

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