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LM4051CIM3X-1.2 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LM4051CIM3X-1.2 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 14 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Reverse Current 20 mA Forward Current 10 mA Maximum Output Voltage (LM4051-ADJ) 15V Power Dissipation (T A = 25˚C) (Note 2) M3 Package 280 mW Storage Temperature −65˚C to +150˚C Lead Temperature M3 Packages Vapor phase (60 seconds) +215˚C Infrared (15 seconds) +220˚C ESD Susceptibility Human Body Model (Note 3) 2 kV Machine Model (Note 3) 200V See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. Operating Ratings(Notes 1, 2) Temperature Range (T min ≤ TA ≤ Tmax) Industrial Temperature Range −40˚C ≤ T A ≤ +85˚C Reverse Current LM4051-1.2 60 µA to 12 mA LM4051-ADJ 60 µA to 12 mA Output Voltage Range LM4051-ADJ 1.24V to 10V LM4051-1.2 Electrical Characteristics Boldface limits apply for T A =TJ =TMINto TMAX; all other limits TA =TJ = 25˚C. The grades A, B and C designate initial Re- verse Breakdown Voltage tolerances of ±0.1%, ±0.2% and ±0.5% respectively. Symbol Parameter Conditions Typical (Note 4) LM4051AIM3 (Limits) (Note 5) LM4051BIM3 (Limits) (Note 5) LM4051CIM3 Limts (Note 5) Units (Limit) V R Reverse Breakdown Voltage I R = 100 µA 1.225 V Reverse Breakdown Voltage I R = 100 µA ±1.2 ±2.4 ±6 mV (max) Tolerance (Note 6) ±5.2 ±6.4 ±10.1 mV (max) I RMIN Minimum Operating Current 39 µA 60 60 60 µA (max) 65 65 65 µA (max) ∆V R/∆T Average Reverse Breakdown Voltage Temperature Coefficient (Note 6) I R=10mA ±20 ppm/˚C I R =1mA ±15 ppm/˚C I R = 100 µA ∆T = −40˚C to 125˚C ±15 ±50 ±50 ±50 ppm/˚C (max) ∆V R/∆IR Reverse Breakdown Voltage Change with Operating Current Change I RMIN ≤ IR ≤ 1 mA 0.3 mV 1.1 1.1 1.1 mV (max) 1.5 1.5 1.5 mV (max) 1mA ≤ I R ≤ 12 mA 1.8 mV 6.0 6.0 6.0 mV (max) 8.0 8.0 8.0 mV (max) Z R Reverse Dynamic Impedance I R = 1 mA, f = 120 Hz 0.5 Ω e N Wideband Noise I R = 100 µA 20 µV rms 10 Hz ≤ f ≤ 10 kHz ∆V R Reverse Breakdown Voltage Long Term Stability (Note 9) t = 1000 hrs T = 25˚C ±0.1˚C I R = 100 µA 120 ppm V HYST Output Hysteresis (Note 10) ∆T = −40˚C to 125˚C 0.36 mV/V www.national.com 3 |
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