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2SC3175 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3175 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SC3175 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.2 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 100 μ A IEBO Emitter Cutoff Current VEB=6V; IC= 0 100 μ A hFE-1 DC Current Gain IC= 1A ; VCE= 1V 15 hFE-2 DC Current Gain IC= 5A ; VCE= 1V 10 50 fT Current-Gain—Bandwidth Product IE= -500mA; VCE= 10V 10 40 MHz |
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