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MJD122 Datasheet(PDF) 2 Page - ON Semiconductor |
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MJD122 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) www.onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5 Vdc Collector Current Continuous Peak IC 8 16 Adc Base Current IB 120 mAdc Total Power Dissipation @ TC = 25°C Derate above 25 °C PD 20 0.16 W W/ °C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25 °C PD 1.75 0.014 W W/ °C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note1) RqJA 71.4 °C/W 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. |
Similar Part No. - MJD122_16 |
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Similar Description - MJD122_16 |
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