MJD122 datasheet(3/8 Pages) ONSEMI

Part #	MJD122

Description	Complementary Darlington Power Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 30 mAdc, IB = 0)

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

ICEO

−

10

mAdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

ICBO

−

10

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

−

2

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 4 Adc, VCE = 4 Vdc)

(IC = 8 Adc, VCE = 4 Vdc)

hFE

1000

100

12,000

−

Collector−Emitter Saturation Voltage

(IC = 4 Adc, IB = 16 mAdc)

(IC = 8 Adc, IB = 80 mAdc)

VCE(sat)

−

2

4

Vdc

Base−Emitter Saturation Voltage (Note 2)

(IC = 8 Adc, IB = 80 mAdc)

VBE(sat)

−

4.5

Vdc

Base−Emitter On Voltage

(IC = 4 Adc, VCE = 4 Vdc)

VBE(on)

−

2.8

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain−Bandwidth Product

(IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)

|hfe|

4

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

MJD127, NJVMJD127

MJD122, NJVMJD122

Cob

−

300

200

pF

Small−Signal Current Gain

(IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz)

hfe

300

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

Figure 1. Power Derating

25

T, TEMPERATURE (

°C)

0

50

75

100

125

150

20

15

10

5

2.5

0

2

1.5

1

0.5

TA TC

TA

SURFACE

MOUNT

TC

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