BDX53CG datasheet(1/7 Pages) ONSEMI

Part #	BDX53CG

Description	Plastic Medium-Power Complementary Silicon Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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November, 2014 − Rev. 15

1

Publication Order Number:

BDX53B/D

BDX53B, BDX53C (NPN),

BDX54B, BDX54C (PNP)

Plastic Medium-Power

Complementary Silicon

Transistors

These devices are designed for general−purpose amplifier and

low−speed switching applications.

Features

• High DC Current Gain −

hFE = 2500 (Typ) @ IC = 4.0 Adc

• Collector Emitter Sustaining Voltage − @ 100 mAdc

VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B

VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

BDX53B, BDX54B

BDX53C, BDX54C

VCEO

80

100

Vdc

Collector−Base Voltage

BDX53B, BDX54B

BDX53C, BDX54C

VCB

80

100

Vdc

Emitter−Base Voltage

VEB

5.0

Vdc

Collector Current

− Continuous

− Peak

IC

8.0

12

Adc

Base Current

IB

0.2

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

65

0.48

W

W/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−65 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

RqJA

70

°C/W

Thermal Resistance, Junction−to−Case

RqJC

1.92

°C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

DARLINGTON

8 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

80−100 VOLTS, 65 WATTS

TO−220

CASE 221A

STYLE 1

1

2

3

4

MARKING DIAGRAM

& PIN ASSIGNMENT

1

Base

3

Emitter

4

Collector

2

Collector

www.onsemi.com

BDX5xy =

Device Code

x = 3 or 4

y = B or C

A

=

Assembly Location

Y

=

Year

WW

=

Work Week

G

=

Pb−Free Package

BDX5xyG

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

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