MMBT5551 datasheet(1/5 Pages) YEASHIN

Part #	MMBT5551

Description	High Voltage Transistors

Download	5 Pages

Scroll/Zoom	100%

Manufacturer	YEASHIN [Yea Shin Technology Co., Ltd]

Direct Link	http://www.yeashin.com

Logo

1 / 5 page

DATA SHEET

SEMICONDUCTOR

http://www.yeashin.com

1

REV.02 20120703

MMBT5551

High Voltage Transistors

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V CEO

140

Vdc

Collector–Base Voltage

V CBO

160

Vdc

Emitter–Base Voltage

V EBO

6.0

Vdc

Collector Current — Continuous

I C

600

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

PD

225

mW

TA = 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

556

°C/W

Total Device Dissipation

PD

300

mW

Alumina Substrate, (2) TA = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

417

°C/W

Junction and Storage Temperature

TJ ,Tstg

–55 to +150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(3)

V (BR)CEO

Vdc

(I C = 1.0 mAdc, I B = 0)

MMBT5550

140

—

MMBT5551

160

—

Collector–Base Breakdown Voltage

V (BR)CBO

Vdc

(I C = 100

µAdc, I E = 0)

MMBT5550

160

—

MMBT5551

180

—

Emitter–Base Breakdown Voltage

V (BR)EBO

Vdc

(I E = 10

µAdc, I C = 0)

6.0

—

Collector Cutoff Current

I CBO

( V CB = 100Vdc, I E = 0)

MMBT5550

—

100

nAdc

( V CB = 120Vdc, I E = 0)

MMBT5551

—

50

( V CB = 100Vdc, I E = 0, T A=100 °C)

MMBT5550

—

100

µAdc

( V CB = 120Vdc, I E = 0, T A=100 °C)

MMBT5551

—

50

Emitter Cutoff Current

I EBO

—

50

nAdc

( V BE = 4.0Vdc, I C= 0)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width = 300

µs, Duty Cycle = 2.0%.

2

EMITTER

3

COLLECTOR

1

BASE

FEATURE

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

MMBT5550

M1F

3000/Tape&Reel

MMBT5551

G1

3000/Tape&Reel

We declare that the material of product

compliance with RoHS requirements.

SOT–23 (TO–236AB)

1

2

3

H

Similar Part No. - MMBT5551

Manufacturer	Part #	Datasheet	Description
Diotec Semiconductor	MMBT5551	145Kb / 2P	SMD General Purpose PNP Transistors
Transys Electronics	MMBT5551	170Kb / 2P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
SHIKUES Electronics	MMBT5551	1Mb / 4P	NPN Silicon
SEMTECH ELECTRONICS LTD...	MMBT5551	194Kb / 2P	NPN Silicon Epitaxial Planar Transistors
Guilin Strong Micro-Ele...	MMBT5551	376Kb / 3P	NPN High Voltage Transistor

More results

Similar Description - MMBT5551

Manufacturer	Part #	Datasheet	Description
Motorola, Inc	MPSA42	121Kb / 4P	High Voltage Transistors
Leshan Radio Company	LMBT6517LT1G	253Kb / 6P	High Voltage Transistors
ON Semiconductor	MMBTA92L	103Kb / 4P	High Voltage Transistors October, 2016 ??Rev. 11
Leshan Radio Company	LMBT5550LT1	114Kb / 5P	High Voltage Transistors
List of Unclassifed Man...	2SC507	79Kb / 1P	High Voltage Transistors
Guangdong Kexin Industr...	MMBT5550	43Kb / 2P	High Voltage Transistors
Zowie Technology Corpor...	MMBT5550G	218Kb / 4P	High Voltage Transistors
ON Semiconductor	BSP16T1G	118Kb / 3P	High Voltage Transistors September, 2010 -- Rev. 7
Motorola, Inc	BC450	243Kb / 6P	High Voltage Transistors
Motorola, Inc	MMBT5550LT1	199Kb / 6P	High Voltage Transistors
ON Semiconductor	MMBTA42L	95Kb / 6P	High Voltage Transistors July, 2012 ??Rev. 12

More results

MMBT5551 Datasheet(PDF) 1 Page - Yea Shin Technology Co., Ltd

MMBT5551 Datasheet(HTML) 1 Page - Yea Shin Technology Co., Ltd

Similar Part No. - MMBT5551

Similar Description - MMBT5551

Html Pages

1 2 3 4 5

Datasheet Download

Link URL