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S-5840BAG-M5T1X Datasheet(PDF) 6 Page - Seiko Instruments Inc |
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S-5840BAG-M5T1X Datasheet(HTML) 6 Page - Seiko Instruments Inc |
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6 / 15 page  TEMPERATURE SWITCH IC (THERMOSTAT IC) WITH LATCH S-5840B Series Rev.2.1_01 6 DC Electrical Characteristics 1. CMOS output product Table 6 (Ta = +25°C, unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Power supply voltage VDD − 1.0 − 10.0 V 1 Detection temperature +TD − TDET − 2.5 TDET TDET + 2.5 °C 1 Output current IDETH VDD = 3.5 V, Apply to DET pin VDET = 2.7 V 2 9.4 − mA 2 IDETL VDET = 0.4 V 0.5 2.8 − mA 2 Release voltage for built-in voltage detector VR − VRET × 0.98 VRET VRET × 1.02 V − Hysteresis width for built-in voltage detector VHYS − − VRET × 0.05 − V − Temperature coefficient for built-in voltage detector Δ Δ V Ta V RET RET • Ta = −40°C to +100°C − ±100 − ppm/°C − Current consumption during operation IDD VDD = 3.5 V − 12 24 μA 1 2. Nch open drain output product Table 7 (Ta = +25°C, unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Power supply voltage VDD − 1.0 − 10.0 V 1 Detection temperature +TD − TDET − 2.5 TDET TDET + 2.5 °C 1 Output current IDETL VDET = 0.4 V, VDD = 3.5 V 0.5 2.8 − mA 2 ILEAK VDET = 10.0 V, VDD = 3.5 V − − 100 nA 2 Release voltage for built-in voltage detector VR − VRET × 0.98 VRET VRET × 1.02 V − Hysteresis width for built-in voltage detector VHYS − − VRET × 0.05 − V − Temperature coefficient for built-in voltage detector Δ Δ V Ta V RET RET • Ta = −40°C to +100°C − ±100 − ppm/°C − Current consumption during operation IDD VDD = 3.5 V − 12 24 μA 1 AC Electrical Characteristics Table 8 Item Symbol Condition Min. Typ. Max. Unit Test Circuit Noise suppression time tnoise CD = 4.7 nF, VDD = 3.5 V, Ta = detection temperature 10 30 50 ms − |
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