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LM4766T Datasheet(PDF) 11 Page - National Semiconductor (TI) |
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LM4766T Datasheet(HTML) 11 Page - National Semiconductor (TI) |
11 / 14 page Application Information (Continued) pulled out of mute mode. Taking into account supply line fluc- tuations, it is a good idea to pull out 1 mA per mute pin or 2 mA total if both pins are tied together. UNDER-VOLTAGE PROTECTION Upon system power-up, the under-voltage protection cir- cuitry allows the power supplies and their corresponding ca- pacitors to come up close to their full values before turning on the LM4766 such that no DC output spikes occur. Upon turn-off, the output of the LM4766 is brought to ground be- fore the power supplies such that no transients occur at power-down. OVER-VOLTAGE PROTECTION The LM4766 contains over-voltage protection circuitry that limits the output current to approximately 4.0 Apk while also providing voltage clamping, though not through internal clamping diodes. The clamping effect is quite the same, however, the output transistors are designed to work alter- nately by sinking large current spikes. SPiKe PROTECTION The LM4766 is protected from instantaneous peak- temperature stressing of the power transistor array. The Safe Operating graph in the Typical Performance Characteris- tics section shows the area of device operation where SPiKe Protection Circuitry is not enabled. The waveform to the right of the SOA graph exemplifies how the dynamic pro- tection will cause waveform distortion when enabled. Please refer to AN-898 for more detailed information. THERMAL PROTECTION The LM4766 has a sophisticated thermal protection scheme to prevent long-term thermal stress of the device. When the temperature on the die reaches 165˚C, the LM4766 shuts down. It starts operating again when the die temperature drops to about 155˚C, but if the temperature again begins to rise, shutdown will occur again at 165˚C. Therefore, the de- vice is allowed to heat up to a relatively high temperature if the fault condition is temporary, but a sustained fault will cause the device to cycle in a Schmitt Trigger fashion be- tween the thermal shutdown temperature limits of 165˚C and 155˚C. This greatly reduces the stress imposed on the IC by thermal cycling, which in turn improves its reliability under sustained fault conditions. Since the die temperature is directly dependent upon the heat sink used, the heat sink should be chosen such that thermal shutdown will not be reached during normal opera- tion. Using the best heat sink possible within the cost and space constraints of the system will improve the long-term reliability of any power semiconductor device, as discussed in the Determining the Correct Heat Sink Section. DETERMlNlNG MAXIMUM POWER DISSIPATION Power dissipation within the integrated circuit package is a very important parameter requiring a thorough understand- ing if optimum power output is to be obtained. An incorrect maximum power dissipation calculation may result in inad- equate heat sinking causing thermal shutdown and thus lim- iting the output power. Equation (1) exemplifies the theoretical maximum power dis- sipation point of each amplifier where V CC is the total supply voltage. P DMAX = VCC 2/2 π2R L (1) Thus by knowing the total supply voltage and rated output load, the maximum power dissipation point can be calcu- lated. The package dissipation is twice the number which re- sults from Equation (1) since there are two amplifiers in each LM4766. Refer to the graphs of Power Dissipation versus Output Power in the Typical Performance Characteristics section which show the actual full range of power dissipation not just the maximum theoretical point that results from Equation (1). DETERMINING THE CORRECT HEAT SINK The choice of a heat sink for a high-power audio amplifier is made entirely to keep the die temperature at a level such that the thermal protection circuitry does not operate under normal circumstances. The thermal resistance from the die (junction) to the outside air (ambient) is a combination of three thermal resistances, θ JC, θCS, and θSA. In addition, the thermal resistance, θJC (junction to case), of the LM4766T is 1˚C/W. Using Thermal- loy Thermacote thermal compound, the thermal resistance, θ CS (case to sink), is about 0.2˚C/W. Since convection heat flow (power dissipation) is analogous to current flow, thermal resistance is analogous to electrical resistance, and tem- perature drops are analogous to voltage drops, the power dissipation out of the LM4766 is equal to the following: P DMAX = (TJMAX−TAMB)/θJA (2) where T JMAX = 150˚C, TAMB is the system ambient tempera- ture and θ JA = θJC + θCS + θSA. Once the maximum package power dissipation has been calculated using Equation (1), the maximum thermal resis- tance, θ SA, (heat sink to ambient) in ˚C/W for a heat sink can be calculated. This calculation is made using Equation (3) which is derived by solving for θ SA in Equation (2). θ SA = [(TJMAX−TAMB)−PDMAX(θJC +θCS)]/PDMAX (3) Again it must be noted that the value of θ SA is dependent upon the system designer’s amplifier requirements. If the ambient temperature that the audio amplifier is to be working under is higher than 25˚C, then the thermal resistance for the heat sink, given all other things are equal, will need to be smaller. SUPPLY BYPASSING The LM4766 has excellent power supply rejection and does not require a regulated supply. However, to improve system performance as well as eliminate possible oscillations, the LM4766 should have its supply leads bypassed with low-inductance capacitors having short leads that are lo- cated close to the package terminals. Inadequate power supply bypassing will manifest itself by a low frequency oscil- lation known as “motorboating” or by high frequency insta- bilities. These instabilities can be eliminated through multiple bypassing utilizing a large tantalum or electrolytic capacitor (10 µF or larger) which is used to absorb low frequency variations and a small ceramic capacitor (0.1 µF) to prevent any high frequency feedback through the power supply lines. DS100928-52 www.national.com 11 |
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