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MAAL-011130 Datasheet(PDF) 3 Page - M/A-COM Technology Solutions, Inc. |
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MAAL-011130 Datasheet(HTML) 3 Page - M/A-COM Technology Solutions, Inc. |
3 / 12 page Broadband Low Noise Amplifier 2 - 18 GHz Preliminary - Rev. V1P MAAL-011130 3 PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. For further information and support please visit: https://www.macom.com/support DC-0010873 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Class 1A devices. VDD = 3.3 V VB (V) ID_TOTAL (mA) ID_BIAS (mA) IDD (mA) RB (kΩ) 0.6 32.9 1.2 31.7 2.2 0.7 44.9 2.3 42.6 1.1 0.8 56.7 3.5 53.3 0.7 0.9 67.4 4.6 62.8 0.5 1.0 76.4 5.8 70.5 0.4 Absolute Maximum Ratings6,7 Parameter Absolute Maximum Input Power +10 dBm Operating Voltage 7 V Operating Temperature -40 °C to +85 °C Storage Temperature -65 °C to +150 °C Junction Temperature8,9 +150 °C 6. Exceeding any one or combination of these limits may cause permanent damage to this device. 7. MACOM does not recommend sustained operation near these survivability limits. 8. Operating at nominal conditions with TJ ≤ +150°C will ensure MTTF > 1 x 106 hours. 9. Junction Temperature (TJ) = TC + Өjc * (V * I). Typical thermal resistance (Өjc) = 126°C/W. a) TC = +25°C, TJ = 76°C @ 5 V, 80 mA b) TC = +85°C, TJ = 136°C @ 5 V, 80 mA Application Information The MAAL-011130 is designed to for simple implementation with high performance. The ultra small size, fully matched, and simple bias application allows easy placement on system boards. Bias Adjust Using VB Pin 4 can be connected to a separate voltage source to achieve the desired IDD. The amplifier will be powered down by applying a VB of 0.2 V or less. The following tables show typical total drain current (ID_TOTAL = ID_BIAS + IDD , where ID_BIAS is the current drawn by the VB pin and IDD is the drain current) versus bias voltage (VB) values for VDD voltages of 5.0 V and 3.3 V. Also shown in each case is a typical value of RB required to set IDD if using a single supply (see Single Bias Operation information on page 4). VDD = 5 V VB (V) ID_TOTAL (mA) ID_BIAS (mA) IDD (mA) RB (kΩ) 0.6 89 5.8 83 4.0 0.7 77 4.5 73 1.9 0.8 65 3.4 62 1.3 0.9 53 2.3 50 0.9 1.0 40 1.1 39 0.7 |
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