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E522.31 Datasheet(PDF) 9 Page - ELMOS Semiconductor AG |
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E522.31 Datasheet(HTML) 9 Page - ELMOS Semiconductor AG |
9 / 20 page 9/20 Elmos Semiconductor AG Data Sheet QM-No.: 25DS0085E.01 PRODUCTION DATA - JUL 21, 2016 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. 1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER E522.31/33 Description Condition Symbol Min Typ Max Unit RT Resistor Range for Internal Oscillator Operation 1) f OSCIN = 0 Hz R RT,INT 50 120 kΩ OSCIN External Frequency Range 2) f OSCIN,EXT 225 650 kHz Minimum High or Low Pulsewidth at OSCIN for Synchronization T PULSE,MIN,OSCIN 660 ns RT Resistor Range for external Clock Synchronization 225kHz ≤ f OSC,IN ≤ 650kHz R RT,EXT 47 137 kΩ Tracking between R RT and OSCIN frequency for external Oscillator Synchronization 2) R RT,OSCIN -5 5 % Typical Range for Spread Spectrum Modulation of internal Oscillator f OSCIN = 0 Hz only valid for E522.31 f SPREAD -40 40 kHz Digital Dimming Logic Minimum PWDIM Pulse Width 3) T PWDIM,MIN 2 µs PWDIM Frequency f PWDIM 20 400 2000 Hz Timeout for CMP and Softstart Reset PWDIM = '0' T PWM,TIMEOUT 64 ms LGATE Pullup Resistance I LGATE = -5mA T J = 25°C R ON,LGATEH 30 Ω LGATE Pulldown Resistance I LGATE = 5mA T J = 25°C R ON,LGATEL 18 Ω Average Current in LGATE I LGATE,AVG = fPWDIM x Q GATECHARGE + ILGATE,DC I LGATE,AVG 2 mA Pullup Current at PWDIM to V3V3 V PWDIM = 1V I PWDIM,PU -100 -80 -60 µA High Threshold at PWDIM V PWDIM rising V PWDIM,H 2.1 V Low Threshold at PWDIM V PWDIM falling V PWDIM,L 1.2 V Typical Delay by Internal Softstart Ramp (standard setting) PWDIM = '1' (E52231A61C, E52233A61C) 4) 5) t SOFTSTART 7.5 ms Rising Voltage Slope at CMP during Softstart (standard setting) PWDIM = '1' (E52231A61C, E52233A61C) 5) dV/ dt CMP,START1 200 mV / ms Typical Delay by Internal Softstart Ramp (fast setting) PWDIM = '1' (E52231A61CXFR, E52233A61CXFR) 4) 5) t SOFTSTART,FAST 3.75 ms Rising Voltage Slope at CMP during Softstart (fast setting) PWDIM = '1' (E52231A61CXFR, E52233A61CXFR) 5) dV/ dt CMP,START2 400 mV / ms Electrical Characteristics (continued) 1) E522.31 drives typical 1.2V to the RT node 2) The external input frequency must be matched to the frequency given by R RT to detect a valid OSCIN signal 3) Note that the delays in external dimming circuit or magnetic components may limit the dimming pulse width above the E522.3x limit 4) The time given is the typical delay that is necessary to reach a sufficiently high CMP voltage to regulate a typical application. May vary depending on implementation details 5) Not production tested (V VIN = +5.5V to +55V, TAMB = -40°C to +125°C, unless otherwise noted. Typical values are at VVIN = +14V and TAMB = +25°C. Positive currents flow into the device pins.) |
Similar Part No. - E522.31_16 |
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Similar Description - E522.31_16 |
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