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U6049B-FP Datasheet(PDF) 5 Page - TEMIC Semiconductors |
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U6049B-FP Datasheet(HTML) 5 Page - TEMIC Semiconductors |
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5 / 8 page  U6049B TELEFUNKEN Semiconductors Rev. A3, 04-Feb-97 5 (8) Absolute Maximum Ratings Parameters Symbol Value Unit Operating voltage, static, 5 min VBatt 24 V Ambient temperature range Tamb –40 to +125 °C Storage temperature range Tstg – 55 to +125 °C Junction temperature Tj 150 °C Thermal Resistance Parameters Symbol Maximum Unit Junction ambient DIP8 SO8 RthJA RthJA 110 160 K/W K/W Electrical Characteristics VBatt =13.5 V, Tamb = 25°C, reference point ground, figure 2, unless otherwise specified Parameters Test Conditions / Pin Symbol Min Typ Max Unit Operating voltage R1 w 510 W t < 5 min t < 60 min VBatt 6 16 24 18 V 5 V supply Without R1, C1 figure 2b Pins 7 and 8 V8, V7 4.3 6.0 V Stabilized voltage Pin 7 V7 5.0 5.2 5.4 V Undervoltage threshold Power-on reset VS 3.0 4.2 V Supply current Push buttons open Pin 8 IS 1.3 2.0 mA Internal Z-diode I8 = 10 mA Pin 8 VZ 13.5 14 16 V Relay output Pin 2 Saturation voltage I2 = 200 mA I2 = 300 mA V2 1.2 1.5 V Leakage current V2 = 14 V Ilkg 2 100 mA Output current I2 300 mA Output pulse current Load dump pulse I2 1.5 A Internal Z-diode I2 = 10 mA V2 20 22 24 V Oscillator input f = 0.001 to 40 kHz, see table 1 Pin 6 Internal discharge resistance R6 1.6 2.0 2.4 k W Switching voltage Lower Upper V6L V6H 0.9 2.8 1.1 3.1 1.4 3.5 V Input current V6 = 0 V –I6 1 mA Switching times Debounce time t3 5 7 cycles Delay time td 72704 74752 cycles Inputs Pin 3, 4, 5 Switching threshold V3,4,5 1.6 2.0 2.4 V Internal Z-diode I3, 4, 5 = 10 mA V3,4,5 6.5 7.1 8.0 V Ignition input Pin 3 Pull-down resistance Switched to VBatt ( 15) R3 13 20 50 k W Thermal switch Pin 4 Input current V4 = 0 V – I4 2 mA Programming input Pin 5 Input current V5 = 0 V – I5 2 mA |
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