Broadband, Mesa Beam Lead PIN Diodes

Rev. V2

MPN1xxx-12 Series

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Part Number

Voltage

Breakdown

Junction

Capacitance

Series Resistance

Lifetime

Switching Time

10 µA

-10 V, 1 MHz

10 mA, 1 GHz

50 mA, 1 GHz

20% - 80%

V

pF

ns

ns

Ω

(Min.)

(Max.)

(Max.)

(Max.)

(Typ.)

(Max.)

MPN1000-12

100

0.020

6.5

4.0

80

5

MPN1001-12

100

0.027

6.0

3.5

80

5

MPN1002-12

100

0.030

5.5

3.2

80

5

MPN1003-12

100

0.035

5.0

2.9

80

5

MPN1004-12

100

0.040

5.0

2.7

80

5

MPN1005-12

100

0.048

5.0

2.5

80

5

MPN1006-12

100

0.055

4.0

2.3

80

5

MPN1007-12

100

0.065

4.0

2.1

80

5

MPN1100-12

50

0.025

6.0

3.7

50

3

MPN1101-12

50

0.030

5.0

3.5

50

3

MPN1102-12

50

0.040

4.5

2.9

50

3

MPN1103-12

50

0.060

4.0

2.5

50

3

Beam Lead Chip

Features

 Fast Switching Speed

 Low Capacitance

 Low Resistance

 Rugged Construction

 RoHS* Compliant

Description

The MPN1xxx-12 Series beam lead PIN diodes

features a unique glass and beam construction

which allows for mechanical strength and stability

during assembly. They are designed for low

resistance, low capacitance and fast switching time.

The mesa beam lead PINs are suitable for microstrip

or stripline circuits and for circuits requiring high

isolation from series mounted diodes as in

broadband multi-throw switches, phase shifters,

attenuators, limiters and modulators.