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X84256V14 Datasheet(PDF) 5 Page - Xicor Inc. |
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X84256V14 Datasheet(HTML) 5 Page - Xicor Inc. |
5 / 15 page X84256 Preliminary 5 —Write ‘1’—when reading data —Read/Read/Write ‘1’—after data is written to device, but before entering the NV write sequence. —the device powers-up; —a nonvolatile write operation completes. While a sequential read is in progress, the device remains in an active state. This state draws more current than the idle state, but not as much as during a read itself. To go back to the lowest power condition, an invalid condition is created by writing a ‘1’ after the last bit of a read operation. Write Protection The following circuitry has been included to prevent inadvertent nonvolatile writes: —A special “start nonvolatile write” command sequence is required to start a nonvolatile write cycle. ABSOLUTE MAXIMUM RATINGS* Temperature under Bias ...................... –65°C to +135°C Storage Temperature ........................... –65°C to +150°C Terminal Voltage with Respect to VSS .......................................–1V to +7V DC Output Current................................................... 5mA Lead Temperature (Soldering, 10 seconds)..........300°C RECOMMENDED OPERATING CONDITIONS *COMMENT Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and the functional operation of the device at these or any other conditions above those indicated in the operational sections of this speci- fication is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Temperature Min. Max. Commercial 0°C +70°C Industrial –40°C +85°C Military† –55°C +125°C Supply Voltage Limits X84256 5V ±10% X84256 – 2.5 2.5V to 5.5V X84256 – 1.8 1.8V to 3.6V D.C. OPERATING CHARACTERISTICS (VCC = 5V ±10%) (Over the recommended operating conditions, unless otherwise specified.) Notes: (1) VIL Min. and VIH Max. are for reference only and are not tested. Symbol Parameter Limits Units Test Conditions Min. Max. ICC1 VCC Supply Current (Read) 1 mA OE = VIL, WE = VIH, I/O = Open, CE clocking @ 10MHz ICC2 VCC Supply Current (Write) 3mA ICC During Nonvolatile Write Cycle All Inputs at CMOS Levels ISB1 VCC Standby Current 1 µA CE = VCC, Other Inputs = VCC or VSS ILI Input Leakage Current 10 µA VIN = VSS to VCC ILO Output Leakage Current 10 µA VOUT = VSS to VCC VlL (1) Input LOW Voltage –0.5 VCC x 0.3 V VIH (1) Input HIGH Voltage VCC x 0.7 VCC + 0.5 V VOL Output LOW Voltage 0.4 V IOL = 2.1mA VOH Output HIGH Voltage VCC – 0.8 V IOH = –1mA |
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