Electronic Components Datasheet Search |
|
V6340PTO3E Datasheet(PDF) 2 Page - EM Microelectronic - MARIN SA |
|
V6340PTO3E Datasheet(HTML) 2 Page - EM Microelectronic - MARIN SA |
2 / 8 page R V6340 Copyright © 2005, EM Microelectronic-Marin SA 03/06 – rev.K 2 www.emmicroelectronic.com Absolute Maximum Ratings Parameter Symbol Conditions Voltage at VDD to VSS VDD -0.3V to +8V Minimum voltage at RES or RES Vmin VSS – 0.3V Maximum voltage at RES or RES Vmax VDD + 0.3V Storage Temperature Range TSTO -65°C to +150°C Table 1 Stresses above these listed maximum ratings may cause permanent damages to the device. Exposure beyond specified operating conditions may affect device reliability or cause malfunction. Handling Procedures This device has built-in protection against high static voltages or electric fields; however, it is advised that normal precautions be taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the voltage range. Operating Conditions Parameter Symbol Min Max Unit Operating Temperature 1) TA -40 +125 °C Positive Supply Voltage 2) VDD 1 5.5 V Table 2 1)The maximum operating temperature is confirmed by sampling at initial device qualification. In production, all devices are tested at +25°C 2) VDD = 1V guaranteed at +25°C (see Fig. 14 for more information) Electrical Characteristics TA = +25°C, unless otherwise specified Parameter Symbol Test Conditions Min. Typ. Max. Unit Supply current IDD VDD = 5V, output open 38 50 µA Threshold voltage VTH C, I, O 2.94 3.02 3.10 V VTH D, J, P 3.62 3.72 3.82 V VTH F, L, R 4.27 4.39 4.51 V Threshold hysteresis VHYS 5 mV RES Output Low Level VOL VDD = 1.6V, IOL = 1mA 200 270 mV VOL VDD = 2.5V, IOL = 2mA 195 250 mV VOL VDD = 3.5V, IOL = 3mA 198 250 mV VOL VDD = 5V, IOL = 4mA 185 250 mV RES Output High Level VOH VDD = 1.6V, IOH = -1mA 1.25 1.36 V VOH VDD = 2.5V, IOH = -1.5mA 2.2 2.3 V VOH VDD = 3.5V, IOH = -2.5mA 3.15 3.27 V VOH VDD = 5V, IOH = -3.5mA 4.65 4.76 V Output leakage current 1) ILEAK VDD = 5V 0.005 1 µA Only for version B, H and N Parameter Symbol Test Conditions Min. Typ. Max. Unit Supply current IDD VDD = 5V, output open 19 31 µA Threshold voltage VTH B, H, N 2.56 2.65 2.74 V Threshold hysteresis VHYS 32 mV Table 3 1) Only for Open drain versions Timing Waveform Block Diagram Voltage Reference + - RES or RES V SS V DD Fig.3 Fig.4 |
Similar Part No. - V6340PTO3E |
|
Similar Description - V6340PTO3E |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |