Power MOS FET

846

11

■General Description

■Features

■Applications

■Pin Configuration

■Pin Assignment

■Equivalent Circuit

■Absolute Maximum Ratings

The XP161A1355PR is an N-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

A gate protect diode is built-in to prevent static damage.

The small SOT-89 package makes high density mounting possible.

Low on-state resistance : Rds (on) = 0.05

Ω ( Vgs = 4.5V )

: Rds (on) = 0.07

Ω ( Vgs = 2.5V )

: Rds (on) = 0.15

Ω ( Vgs = 1.5V )

Ultra high-speed switching

Gate protect diode built-in

Operational Voltage

: 1.5V

High density mounting : SOT-89

GNotebook PCs

GCellular and portable phones

GOn-board power supplies

GLi-ion battery systems

NN-Channel Power MOS FET

NDMOS Structure

NLow On-State Resistance : 0.05Ω (max)

NUltra High-Speed Switching

NSOT-89 Package

NGate Protect Diode Built-in

２

３

1

S

D

G

SOT-89

（TOP VIEW）

PIN

NUMBER

PIN

NAME

FUNCTION

1

3

2

G

S

D

Gate

Source

Drain

２

３

1

N-Channel MOS FET

( 1 device built-in )

SYMBOL

RATINGS

UNITS

Vdss

20

V

Vgss

±8

V

Id

4

A

Idp

16

A

Idr

4

A

Pd

2

W

Tch

150

O

C

Tstg

- 55 ~ 150

O

C

( note ) : When implemented on a ceramic PCB

Storage Temperature

Reverse Drain Current

Continuous Channel

Power Dissipation (note)

Channel Temperature

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Drain Current (Pulse)

PARAMETER

11S_40XP161A1355PR 02.9.12 4:15 PM ページ 846