NSS20201LT1G_16 datasheet(4/6 Pages) ONSEMI

Part #	NSS20201LT1G

Description	NPN Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NSS20201LT1G, NSV20201LT1G

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TYPICAL CHARACTERISTICS

Figure 1. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0.001

0

0.05

0.1

0.15

0.2

10

1

0.1

0.01

0.001

0

0.05

0.1

0.15

0.2

0.25

Figure 3. DC Current Gain vs. Collector

Current

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0.001

150

200

300

450

500

550

600

10

1

0.1

0.01

0.001

0.3

0.4

0.5

0.6

0.7

0.8

1.0

1.1

Figure 5. Base Emitter Turn−On Voltage vs.

Collector Current

Figure 6. Saturation Region

IC, COLLECTOR CURRENT (A)

IB, BASE CURRENT (mA)

10

1

0.1

0.01

0.001

0.1

0.2

0.3

0.4

0.5

0.6

0.9

1.0

100

10

1

0.1

0.01

0

0.2

0.4

0.6

0.8

1.0

IC/IB = 10

150°C

25°C

−55°C

IC/IB = 100

150°C

25°C

−55°C

150°C (5.0 V)

150°C (2.0 V)

25°C (5.0 V)

25°C (2.0 V)

−55°C (5.0 V)

−55°C (2.0 V)

0.9

150°C

25°C

−55°C

150°C

25°C

−55°C

0.7

0.8

IC = 500 mA

300 mA

100 mA

10 mA

IC/IB = 10

250

350

VCE = 2.0 V

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Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NSS20201LT1G	135Kb / 6P	20 V, 4.0 A, Low VCE(sat) NPN Transistor November, 2011 ??Rev. 6

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NSS20201LT1G Datasheet(PDF) 4 Page - ON Semiconductor

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