NJD2873 datasheet(2/5 Pages) ONSEMI

Part #	NJD2873

Description	Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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NJD2873

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance

Junction−to−Case

Junction−to−Ambient (Note 1)

RqJC

RqJA

10

89.3

°C/W

1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 10 mAdc, IB = 0)

VCEO(sus)

50

−

Vdc

Collector Cutoff Current

(VCB = 50 Vdc, IE = 0)

ICBO

−

100

nAdc

Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)

IEBO

−

100

nAdc

ON CHARACTERISTICS

DC Current Gain (Note 2)

(IC = 0.5 A, VCE = 2 V)

(IC = 2 Adc, VCE = 2 Vdc)

(IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C)

hFE

120

40

80

360

−

360

−

Collector−Emitter Saturation Voltage (Note 2)

(IC = 1 A, IB = 0.05 A)

VCE(sat)

−

0.3

Vdc

Base−Emitter Saturation Voltage (Note 2) (IC = 1 A, IB = 0.05 Adc)

VBE(sat)

−

1.2

Vdc

Base−Emitter On Voltage (Note 2)

(IC = 1 Adc, VCE = 2 Vdc)

(IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C)

VBE(on)

−

1.2

0.95

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 3)

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

fT

65

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

Cob

−

80

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width = 300

ms, Duty Cycle [ 2%.

3. fT = ⎪hfe⎪• ftest.

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