© Semiconductor Components Industries, LLC, 1998

October, 2016 − Rev. 3

1

Publication Order Number:

MMBT3416LT3/D

MMBT3416LT3G

General Purpose Amplifier

NPN Silicon

Features

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

40

Vdc

Collector−Base Voltage

4.0

Vdc

Collector Current − Continuous

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

Derate above 25°C

225

1.8

mW

mW/°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina Substrate,

Derate above 25°C

300

2.4

mW

mW/°C

Thermal Resistance, Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

www.onsemi.com

SOT−23 (TO−236)

CASE 318

STYLE 6

1

2

3

1

GP M G

G

MARKING DIAGRAM

COLLECTOR

3

1

BASE

2

EMITTER

Device

Package

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBT3416LT3G

SOT−23

(Pb−Free)

10,000/Tape & Reel

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

GP = Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)