MJE270G datasheet(2/3 Pages) ONSEMI

Part #	MJE270G

Description	Complementary Silicon Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJE270G (NPN), MJE271G (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 10 mAdc, IB = 0)

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 100 Vdc, IB = 0)

ICEO

−

1.0

mAdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

ICBO

−

0.3

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

0.1

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 40 Vdc, t = 1.0 s, Non−repetitive)

IS/b

375

−

Adc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 20 mAdc, VCE = 3.0 Vdc)

(IC = 120 mAdc, VCE = 10 Vdc)

hFE

500

1500

−

Collector−Emitter Saturation Voltage

(IC = 20 mAdc, IB = 0.2 mAdc)

(IC = 120 mAdc, IB = 1.2 mAdc)

VCE(sat)

−

2.0

3.0

Vdc

Base−Emitter On Voltage

(IC = 120 mAdc, VCE = 10 Vdc)

VBE(on)

−

2.0

Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 0.05 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)

fT

6.0

−

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

2. fT = ⎪hfe⎪• ftest.

10,000

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

100

0.05

0.3

1.0

1.5

1000

700

Figure 2. Safe Operating Area

7000

300

VCE = 3.0 V

150

°C

25

°C

3000

0.1

0.7

5000

500

0.03

0.07

0.015

0.5

-55

°C

10

1.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.01

100

5.0

0.1

0.05

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMIT

7.0

10

dc

1.0

0.5

MJE270/MJE271

3.0

30

70

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