BUB323ZG datasheet(5/8 Pages) ONSEMI

Part #	BUB323ZG

Description	NPN Silicon Power Darlington

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Manufacturer	ONSEMI [ON Semiconductor]

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BUB323Z

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5

Figure 5. DC Current Gain

IC, COLLECTOR CURRENT (MILLIAMPS)

10000

1000

100

10

100

1000

10000

TJ = 125°C

25

°C

-40

°C

VCE = 1.5 V

Figure 6. DC Current Gain

IC, COLLECTOR CURRENT (MILLIAMPS)

100000

1000

100

10

100

1000

10000

TYPICAL

VCE = 5 V, TJ = 25°C

10000

TYP + 6

Σ

TYP - 6

Σ

Figure 7. Collector Saturation Region

IB, BASE CURRENT (MILLIAMPS)

100

10

1

0

2.5

4.0

5.0

TJ = 25°C

IC = 3 A

4.5

2.0

3.5

3.0

1.0

0.5

1.5

5 A

7 A

8 A

10 A

Figure 8. Collector−Emitter Saturation Voltage

IC, COLLECTOR CURRENT (AMPS)

10

1

0.1

0.4

1.4

2.0

2.4

2.2

1.2

1.8

1.6

0.8

0.6

1.0

TJ = 125°C

25

°C

IC/IB = 150

Figure 9. Base−Emitter Saturation Voltage

IC, COLLECTOR CURRENT (AMPS)

10

1

0.1

0.8

1.8

2.0

1.4

1.6

1.2

1.0

Figure 10. Base−Emitter “ON” Voltages

IC, COLLECTOR CURRENT (AMPS)

10

1

0.1

0.6

1.4

1.8

2.0

1.2

1.6

0.8

1.0

IC/IB = 150

TJ = 25°C

125

°C

VCE = 2 VOLTS

TJ = 25°C

125

°C

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