© Semiconductor Components Industries, LLC, 1994

November, 2016 − Rev. 4

1

Publication Order Number:

BSV52LT1/D

BSV52LT1G

Switching Transistor

NPN Silicon

Features

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

12

Vdc

Collector − Base Voltage

20

Vdc

Collector Current − Continuous

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

SOT−23 (TO−236)

CASE 318

STYLE 6

Device

Package

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BSV52LT1G

SOT−23

(Pb−Free)

3,000 / Tape & Reel

1

2

3

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

1

B2 M

G

G

B2 = Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

COLLECTOR

3

1

BASE

2

EMITTER

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