2N4922G datasheet(4/6 Pages) ONSEMI

Part #	2N4922G

Description	Medium-Power Plastic NPN Silicon Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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2N4921G, 2N4922G, 2N4923G

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Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

0.05

0.1

0.2 0.3

0.5

1.0

2.0 3.0

5.0

10

20

30

50

100

200 300

1000

500

qJC(t) = r(t) qJC

qJC = 4.16°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

0.1

SINGLE PULSE

10

1.0

Figure 5. Active−Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.5

0.1

2.0

3.0

5.0

10

20

30

50

100

70

0.2

TJ = 150°Cdc

5.0 ms

7.0

PULSE CURVES APPLY BELOW

RATED VCEO

SECOND BREAKDOWN

LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

7.0

3.0

0.7

0.3

1.0 ms

100

ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

operation i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC

is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided

TJ(pk) ≤ 150_C. At high case temperatures, thermal

limitations will reduce the power that can be handled to

values less than the limitations imposed by second

breakdown.

5.0

10

Figure 6. Storage Time

IC, COLLECTOR CURRENT (mA)

2.0

1.0

0.5

0.3

0.2

0.1

0.05

20

30

50

70

500 700 1000

0.07

100

3.0

0.7

200 300

TJ = 25°C

TJ = 150°C

IC/IB = 10

IC/IB = 20

5.0

10

Figure 7. Fall Time

IC, COLLECTOR CURRENT (mA)

2.0

1.0

0.5

0.3

0.2

0.1

0.05

20

30

50

70

500 700 1000

0.07

100

3.0

0.7

200 300

TJ = 25°C

TJ = 150°C

IC/IB = 20

IC/IB = 10

IC/IB = 20

IB1 = IB2

ts′ = ts - 1/8 tf

VCC = 30 V

IB1 = IB2

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