PIN Diode Shunt Switch Element

Rev. V1

MSWSH-100-30

1

1

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1

Features

 Supports up to 100 W when hot switched

 Supports up to 300 W when cold switched

 Low Insertion Loss: 0.15 dB up to 2.7 GHz

 High Isolation: 31 dB up to 2.7 GHz

 RoHS* Compliant

Description

A broadband, high linearity, high power shunt switch

element in a 10 x 4 mm bolt channel metal package.

This device is designed for WiMax, Wibro, WLAN,

TD-SCDMA

and

other

wireless

infrastructure

applications. It is also suited for 0.1 ~ 6 GHz

applications with up to 100 watts of power.

* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

Parameter

Test Conditions

Units

Min.

Typ.

Max.

V

700

—

—

mV

—

850

—

pF

—

0.4

—

Ω

—

0.4

0.6

I-Region (W)

I-Layer

µm

—

80

—

2.3 ~ 2.7 GHz

<6.0 GHz

dB

—

0.15

0.35

0.25

0.45

2.3 ~ 2.7 GHz

6.0 GHz

dB

28

23

31

26

—

2.3 ~ 2.7 GHz

6.0 GHz

dB

15

10

22

15

—

ns

—

3400

—

Absolute Maximum Ratings

Parameter

Absolute Maximum

Peak Current

1 A

Thermal Resistance

5°C/W

Junction Temperature

+175°C

Storage Temperature

-65°C to +150°C

Solder Temperature

+230°C for 30 seconds