GaN Wideband Power Amplifier, 28 V, 5 W

20 - 1500 MHz

Rev. V1

NPA1003QA

1

1

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1

Features

 GaN on Si HEMT D-Mode Amplifier

 Suitable for linear and saturated applications

 Broadband operation from 20 - 1500 MHz

 28 V Operation

 16 dB Gain @ 1 GHz

 42% PAE @ 1 GHz

 100% RF Tested

 50 Ω Input / Output Matched

 Lead-Free 4 mm 16-lead QFN plastic Package

 RoHS* Compliant and 260°C Reflow Compatible

Description

The NPA1003QA is a wideband GaN power

amplifier optimized for 20 - 1500 MHz operation.

This amplifier has been designed for saturated and

linear operation with output levels to 5 W (37 dBm)

assembled in a lead-free 4 mm 16-lead QFN plastic

package.

The NPA1003QA is ideally suited for broadband

general purpose, test and measurement, defense

communications, land mobile radio and wireless

infrastructure.

Ordering Information

*Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

Part Number

Package

NPA1003QA

Bulk

NPA1003QA-SMBPPR

sample

Functional Schematic

Pin No.

Pin Name

Function

1

N/C

No Connection

2

RF Input / Gate Voltage

3

RF Input / Gate Voltage

4

N/C

No Connection

5-8

N/C

No Connection

9

N/C

No Connection

10

RF Output / Drain Voltage

11

RF Output / Drain Voltage

12

N/C

No Connection

13-16

N/C

No Connection

17

Ground

1. All no connection pins may be left floating or grounded.

2. The exposed pad centered on the package bottom must be

connected to RF and DC ground. This path must also provide

a low thermal resistance heat path.

17

1

2

3

12

11

4

9

10

N/C

N/C

N/C

N/C

Paddle

5

6

7

8

16

15

14

13

N/C

N/C

N/C

N/C

N/C

N/C

N/C

N/C