High Voltage, Isolated Gate Driver with

Internal Miller Clamp, 2 A Output

Data Sheet

ADuM4121/ADuM4121-1

Rev. 0

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FEATURES

2.5 V to 6.5 V input

4.5 V to 35 V output

Precise timing characteristics

53 ns maximum isolator and driver propagation delay

CMOS input logic levels

High common-mode transient immunity: >150 kV/µs

High junction temperature operation: 125°C

Default low output

Internal Miller clamp

Safety and regulatory approvals (pending)

UL recognition per UL 1577

5 kV rms for 1-minute withstand

CSA Component Acceptance Notice 5A

VDE certificate of conformity (pending)

DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12

Wide-body, 8-lead SOIC

APPLICATIONS

Switching power supplies

Isolated IGBT/MOSFET gate drives

Industrial inverters

Gallium nitride (GaN)/silicon carbide (SiC) power devices

GENERAL DESCRIPTION

The ADuM4121/ADuM4121-11 are 2 A isolated, single-channel

drivers that employ Analog Devices, Inc.’s iCoupler® technology

to provide precision isolation. The ADuM4121/ADuM4121-1

provide 5 kV rms isolation in the wide-body, 8-lead SOIC package.

Combining high speed CMOS and monolithic transformer

technology, these isolation components provide outstanding

performance characteristics superior to alternatives such as the

combination of pulse transformers and gate drivers.

The ADuM4121/ADuM4121-1 operate with an input supply

ranging from 2.5 V to 6.5 V, providing compatibility with lower

voltage systems. In comparison to gate drivers that employ high

voltage level translation methodologies, the ADuM4121/

ADuM4121-1 offer the benefit of true, galvanic isolation

between the input and the output.

The ADuM4121/ADuM4121-1 include an internal Miller clamp

that activates at 2 V on the falling edge of the gate drive output,

supplying the driven gate with a lower impedance path to reduce

the chance of Miller capacitance induced turn on.

Options exists to allow the thermal shutdown to be enabled or

disabled. As a result, the ADuM4121/ADuM4121-1 provide

reliable control over the switching characteristics of insulated

gate bipolar transistor (IGBT)/metal oxide semiconductor field,

effect transistor (MOSFET) configurations over a wide range of

switching voltages.

FUNCTIONAL BLOCK DIAGRAM

Figure 1.

1

Protected by U.S. Patents 5,952,849; 6,873,065; 7,075,239. Other patents pending.

ENCODE

DECODE

AND

LOGIC

CLAMP

ADuM4121/

ADuM4121-1

UVLO

UVLO

TSD

2V

1

2

3

4

8

7

6

5