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S-8243AADFT-TB-G Datasheet(PDF) 10 Page - Seiko Instruments Inc |
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S-8243AADFT-TB-G Datasheet(HTML) 10 Page - Seiko Instruments Inc |
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10 / 35 page  BATTERY PROTECTION IC FOR 3-SERIAL OR 4-SERIAL CELL PACK S-8243A/B Series Rev.3.1_00 10 Table 7 (2 / 2) Item Symbol Remarks Min. Typ. Max. Unit Test circuit INPUT CURRENT Current consumption at not monitoring VBATOUT IOPE V1 = V2 = V3 = V4 = 3.5 V, VMP = VDD − 65 120 μA 1 Current consumption at power down IPDN V1 = V2 = V3 = V4 = 1.5 V, VMP = VSS − − 0.1 μA 1 Current for VCn at not monitoring VBATOUT (n = 2, 3) IVCnN V1 = V2 = V3 = V4 = 3.5 V −0.3 0 0.3 μA 3 Current for VC1 at monitoring of VBATOUT IVC1 V1 = V2 = V3 = V4 = 3.5 V − 3.2 10.4 μA 3 Current for VC2 at monitoring of VBATOUT IVC2 V1 = V2 = V3 = V4 = 3.5 V − 2.0 7.2 μA 3 Current for VC3 at monitoring of VBATOUT IVC3 V1 = V2 = V3 = V4 = 3.5 V, VCTL1 = 0 V − 1.0 4.0 μA 3 Current for CTL1 at Low ICTL1L V1 = V2 = V3 = V4 = 3.5 V, VCTL1 = 0 V −0.4 −0.2 − μA 5 Current for CTLn at High n = 2, 3, 4 ICTLnH VCTLn = VOUT − 2.5 5 μA 9 Current for CTLn at Low n = 2, 3, 4 ICTLnL VCTLn = 0 V −5 −2.5 − μA 9 OUTPUT CURRENT Leak current COP ICOH VCOP = 24 V − − 0.1 μA 9 Sink current COP ICOL VCOP = VSS +0.5 V 10 − − μA 9 Source current DOP IDOH VDOP = VDD −0.5 V 10 − − μA 9 Sink current DOP IDOL VDOP = VSS +0.5 V 10 − − μA 9 Source current VBATOUT IVBATH VBATOUT = VDD −0.5 V 100 − − μA 9 Sink current VBATOUT IVBATL VBATOUT = VSS +0.5 V 100 − − μA 9 Applied to S-8243BAEFT, S-8243BAFFT, S-8243BAHFT Item Symbol Conditions Min. Typ. Max. Unit Test circuit DELAY TIME Overcharge detection delay time tCU CCT = 0.1 μF 0.5 1.0 1.5 s 5 Overdischarge detection delay time tDL CDT = 0.1 μF 50 100 150 ms 5 Overcurrent detection delay time 1 tlOV1 CDT = 0.1 μF 5 10 15 ms 5 Overcurrent detection delay time 2 tlOV2 − 1.5 2.5 4.0 ms 4 Overcurrent detection delay time 3 tlOV3 − 100 300 600 μs 4 Applied to S-8243BADFT Item Symbol Conditions Min. Typ. Max. Unit Test circuit DELAY TIME Overcharge detection delay time tCU CCT = 0.1 μF 0.5 1.0 1.5 s 5 Overdischarge detection delay time tDL CDT = 0.1 μF 55.5 111 222 ms 5 Overcurrent detection delay time 1 tlOV1 CDT = 0.1 μF 3.31 6.62 13.2 ms 5 Overcurrent detection delay time 2 tlOV2 − 1.5 2.5 4.0 ms 4 Overcurrent detection delay time 3 tlOV3 − 100 300 600 μs 4 *1. Temperature coefficient for detection and release voltage is applied to overcharge detection voltage n, overcharge release voltage n, overdischarge detection voltage n, and overdischarge release voltage n. *2. Temperature coefficient for overcurrent detection voltage is applied to over current detection voltage 1 and 2. *3. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. |
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