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IDT71T75602 Datasheet(PDF) 5 Page - Integrated Device Technology

Part # IDT71T75602
Description  Synchronous ZBT SRAMs
Download  23 Pages
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT71T75602 Datasheet(HTML) 5 Page - Integrated Device Technology

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6.42
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
5
Absolute Maximum Ratings(1)
Pin Configuration — 1Mx 18
100-Pin TQFP Capacitance
(TA = +25°C, f = 1.0MHz)
NOTES:
1. Pins 14, 16, and 66 do not have to be connected directly to VDD as long as the
input voltage is
≥ VIH.
2. Pins 38, 39 and 43 will be pulled internally to VDD if not actively driven. To
disable the TAP controller without interfering with normal operation, several
settings are possible. Pins 38, 39 and 43 could be tied to VDD or VSS and pin 42
should be left unconnected. Or all JTAG inputs (TMS, TDI and TCK) pins 38,
39 and 43 could be left unconnected “NC” and the JTAG circuit will remain
disabled from power up.
3. Pin 43 is reserved for the 36M address. JTAG is not offered in the 100-pin
TQFP package for the 36M ZBT device.
Top View
100 TQFP
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary; however,
the voltage on any input or I/O pin cannot exceed VDDQ during power supply ramp
up.
7. During production testing, the case temperature equals TA.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
Symbol
Rating
Commercial
Industrial
Unit
VTERM(2)
Terminal Voltage with
Respect to GND
-0.5 to +3.6
-0.5 to +3.6
V
VTERM(3,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD
-0.5 to VDD
V
VTERM(4,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD +0.5
-0.5 to VDD +0.5
V
VTERM(5,6)
Terminal Voltage with
Respect to GND
-0.5 to VDDQ +0.5
-0.5 to VDDQ +0.5
V
TA(7)
Operating Ambient
Temperature
0 to +70
-40 to +85
o
C
TBIAS
Temperature Under Bias
-55 to +125
-55 to +125
o
C
TSTG
Storage Temperature
-55 to +125
-55 to +125
o
C
PT
Power Dissipation
2.0
2.0
W
IOUT
DC Output Current
50
50
mA
5313 tbl 06
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
5
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
5313 tbl 07
100 99 98 97 96 95 94 93 92 91 90
87 86 85 84 83 82 81
89 88
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC
NC
VDDQ
VSS
NC
I/OP2
I/O15
I/O14
VSS
VDDQ
I/O13
I/O12
VSS
VDD
I/O11
I/O10
VDDQ
VSS
I/O9
I/O8
NC
NC
VSS
VDDQ
NC
NC
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
NC
VDDQ
VSS
NC
I/OP1
I/O7
I/O6
VSS
VDDQ
I/O5
I/O4
VSS
VDD
I/O3
I/O2
VDDQ
VSS
I/O1
I/O0
NC
NC
VSS
VDDQ
NC
NC
5313 drw 02a
VDD(1)
NC
NC
VDD(1)
NC
NC
VDD(1)
A10
ZZ
,
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
7
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
5313 tbl 07a
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
7
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
5313 tbl 07b
165 fBGA Capacitance
(TA = +25°C, f = 1.0MHz)
119 BGA Capacitance
(TA = +25°C, f = 1.0MHz)


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