4

IDT71V547, 128K x 36, 3.3V Synchronous SRAM with

ZBT









 Feature, Burst Counter and Flow-Through Outputs

Commercial and Industrial Temperature Ranges

Capacitance

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those

indicated in the operational sections of this specification is not implied. Exposure

to absolute maximum rating conditions for extended periods may affect

reliability.

3. I/O terminals.

NOTE:

1. Thisparameterisguaranteedbydevicecharacterization,butnotproductiontested.

Symbol

Rating

Value

Unit

Supply Voltage on VDD with

Respect to GND

–0.5 to +3.6

V

V

DC Voltage Applied to Outputs in

V

Operating Temperature

0°C to 70°C

°C

Ambient Temperature with Power

Applied (Temperature Under

Bias)

–55 to +125

°C

Storage Temperature

–65 to +150

°C

Current into Outputs (Low)

20

mA

Static Discharge Voltage

(per MIL-STD-883, Method 3015)

>2001

V

Latch-Up Current

>200

mA

5284 tbl 05

Symbol

Conditions

Max.

Unit

Input Capacitance

5

pF

I/O Capacitance

7

pF

3822 tbl 06

RecommendedOperating

Temperature and Supply Voltage

Recommended DC Operating

Conditions

NOTES:

Grade

Temperature

Commercial

3.3V±5%

Industrial

3.3V±5%

3822 tbl 03

Symbol

Parameter

Min.

Typ.

Max.

Unit

Supply Voltage

3.135

3.3

3.465

V

Ground

0

0

0

V

Input High Voltage - Inputs

2.0

____

4.6

V

Input High Voltage - I/O

2.0

____

V

Input Low Voltage

____

0.8

V

3822 tbl 04