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71T75602100BGI8 Datasheet(PDF) 1 Page - Integrated Device Technology

Part # 71T75602100BGI8
Description  Synchronous ZBT SRAMs
Download  23 Pages
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

71T75602100BGI8 Datasheet(HTML) 1 Page - Integrated Device Technology

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APRIL 2012
DSC-5313/10
1
©2012 Integrated Device Technology, Inc.
A0-A19
Address Inputs
Input
Synchronous
CE1
, CE2, CE2
Chip Enables
Input
Synchronous
OE
Output Enable
Input
Asynchronous
R/W
Read/Write Signal
Input
Synchronous
CEN
Clock Enable
Input
Synchronous
BW1
, BW2, BW3, BW4
Individual Byte Write Selects
Input
Synchronous
CLK
Clock
Input
N/A
ADV/LD
Advance burst address / Load new address
Input
Synchronous
LBO
Linear / Interleaved Burst Order
Input
Static
TMS
Test Mode Select
Input
N/A
TDI
Test Data Input
Input
N/A
TCK
Test Clock
Input
N/A
TDO
Test Data Input
Output
N/A
TRST
JTAG Reset (Optional)
Input
Asynchronous
ZZ
Sleep Mode
Input
Synchronous
I/O0-I/O31, I/OP1-I/OP4
Data Input / Output
I/O
Synchronous
VDD, VDDQ
Core Power, I/O Power
Supply
Static
VSS
Ground
Supply
Static
5313 tbl 01
Pin Description Summary
Features
• 512K x 36, 1M x 18 memory configurations
• Supports high performance system speed - 200 MHz
(3.2 ns Clock-to-Data Access)
• ZBTTM Feature - No dead cycles between write and read
cycles
• Internally synchronized output buffer enable eliminates the
need to control OE
• Single R/W (READ/WRITE) control pin
• Positive clock-edge triggered address, data, and control
signal registers for fully pipelined applications
• 4-word burst capability (interleaved or linear)
• Individual byte write (BW1 - BW4) control (May tie active)
• Three chip enables for simple depth expansion
• 2.5V power supply (±5%)
• 2.5V I/O Supply (VDDQ)
• Power down controlled by ZZ input
• Boundary Scan JTAG Interface (IEEE 1149.1 Compliant)
• Packaged in a JEDEC standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA)
IDT71T75602
IDT71T75802
512K x 36, 1M x 18
2.5V Synchronous ZBT™ SRAMs
2.5V I/O, Burst Counter
Pipelined Outputs
Description
The IDT71T75602/802 are 2.5V high-speed 18,874,368-bit
(18 Megabit)synchronousSRAMs.Theyaredesignedtoeliminatedead
bus cycles when turning the bus around between reads and writes, or
writes and reads. Thus, they have been given the name ZBTTM, or Zero
Bus Turnaround.
Address and control signals are applied to the SRAM during one
clock cycle, and two cycles later the associated data cycle occurs, be it
read or write.
The IDT71T75602/802 contain data I/O, address and control signal
registers.Outputenableistheonlyasynchronoussignalandcanbeused
todisabletheoutputsatanygiventime.
A Clock Enable CEN pin allows operation of the IDT71T75602/802
tobesuspendedaslongasnecessary.Allsynchronousinputsareignored
when(CEN)ishighandtheinternaldeviceregisterswillholdtheirprevious
values.
There are three chip enable pins (CE1, CE2, CE2) that allow the
usertodeselectthedevicewhendesired.Ifanyoneofthesethreeisnot
assertedwhenADV/LDislow,nonewmemoryoperationcanbeinitiated.
However,anypendingdatatransfers(readsorwrites)willbecompleted.


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