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MA4SW210B-1 Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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MA4SW210B-1 Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
2 / 7 page HMIC™ Silicon PIN Diode Switches with Integrated Bias Network Rev. V6 MA4SWx10B-1 Series 2 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 2 Electrical Specifications: TA = 25°C, 20 mA Parameter Test Conditions Units Min. Typ. Max. Insertion Loss 2 GHz 6 GHz 12 GHz 18 GHz dB — 1.5 0.7 0.9 1.2 1.8 1.0 1.2 1.8 Isolation 2 GHz 6 GHz 12 GHz 18 GHz dB 55 47 40 36 60 50 45 40 — Input Return Loss 2 GHz 6 GHz 12 GHz 18 GHz dB — 14 15 15 13 — Switching Speed2 — ns — 50 — MA4SW210B-1 (SPDT) MA4SW310B-1 (SP3T) Parameter Test Conditions Units Min. Typ. Max. Insertion Loss 2 GHz 6 GHz 12 GHz 18 GHz dB — 1.6 0.8 1.0 1.3 2.0 1.1 1.3 1.9 Isolation 2 GHz 6 GHz 12 GHz 18 GHz dB 54 47 40 36 59 50 45 40 — Input Return Loss 2 GHz 6 GHz 12 GHz 18 GHz dB — 14 15 16 14 — Switching Speed2 — ns — 50 — 1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, IC = C dv/dt, ratio of spike current to steady state current, is typically 10:1. |
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